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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK768R1-100E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7380pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRF8301MTRPBF
Infineon Technologies, N-Channel 30V 34A (Ta), 192A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT, HEXFET®
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STP7N52K3
STMicroelectronics, N-Channel 525V 6A (Tc) 90W (Tc) Through Hole TO-220AB, SuperMESH3™
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