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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9217-75B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 4029pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN62D0U-13
Diodes Incorporated, N-Channel 60V 380mA (Ta) 380mW (Ta) Surface Mount SOT-23,
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STD9N65M2
STMicroelectronics, N-Channel 650V 5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™
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BSC097N06NSTATMA1
Infineon Technologies, N-Channel 60V 13A (Ta), 48A (Tc) 3W (Ta), 43W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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MTD3055VL
ON Semiconductor, N-Channel 60V 12A (Tc) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3,
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IXFH34N65X2
IXYS, N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-247, HiPerFET™
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SIHP180N60E-GE3
Vishay Siliconix, N-Channel 600V 19A (Tc) 156W (Tc) Through Hole TO-220AB,
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NX7002AK,215
Nexperia USA Inc., N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB,
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IRFB3806PBF
Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Through Hole TO-220AB, HEXFET®
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SIJ188DP-T1-GE3
Vishay Siliconix, N-Channel 60V 25.5A (Ta), 92.4A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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US5U3TR
Rohm Semiconductor, N-Channel 30V 1.5A (Ta) 1W (Ta) Surface Mount TUMT5,
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BSC028N06NSTATMA1
Infineon Technologies, N-Channel 60V 24A (Ta), 100A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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IXFN94N50P2
IXYS, N-Channel 500V 68A (Tc) 780W (Tc) Chassis Mount SOT-227B, HiPerFET™, PolarP2™
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