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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9277-55A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 643pF @ 25V
FET Feature -
Power Dissipation (Max) 51W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
R6007ENJTL
Rohm Semiconductor, N-Channel 600V 7A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),
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SQM120N10-3M8_GE3
Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®
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IRFR7746TRPBF
Infineon Technologies, N-Channel 75V 56A (Tc) 99W (Tc) Surface Mount D-PAK (TO-252AA),
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DMN10H170SVTQ-7
Diodes Incorporated, N-Channel 100V 2.6A (Ta) 1.2W (Ta) Surface Mount TSOT-26,
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SUP50020E-GE3
Vishay Siliconix, N-Channel 60V 120A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®
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2N7002BKVL
Nexperia USA Inc., N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™
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SIRC10DP-T1-GE3
Vishay Siliconix, N-Channel 30V 60A (Tc) 43W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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PMV65UNER
Nexperia USA Inc., N-Channel 20V 2.8A (Ta) 490mW (Ta) Surface Mount TO-236AB,
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R6004JND3TL1
Rohm Semiconductor, N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount TO-252,
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SI4100DY-T1-E3
Vishay Siliconix, N-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
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IRL2910STRLPBF
Infineon Technologies, N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®
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