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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK(95,96,9E)08-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 5280pF @ 25V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RSR030N06TL
Rohm Semiconductor, N-Channel 60V 3A (Ta) 540mW (Ta) Surface Mount TSMT3,
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FDS6680A
ON Semiconductor, N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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SIDR622DP-T1-GE3
Vishay Siliconix, N-Channel 150V 64.6A (Ta), 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET®
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SIHP38N60E-GE3
Vishay Siliconix, N-Channel 600V 43A (Tc) 313W (Tc) Through Hole TO-220AB,
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IPL60R105P7AUMA1
Infineon Technologies, N-Channel 650V 33A (Tc) 137W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7
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SUM70040E-GE3
Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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IGT60R190D1SATMA1
Infineon Technologies, N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3, CoolGaN™
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RCJ700N20TL
Rohm Semiconductor, N-Channel 200V 70A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,
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FQP6N60C
ON Semiconductor, N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3, QFET®
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STS1NK60Z
STMicroelectronics, N-Channel 600V 250mA (Tc) 2W (Tc) Surface Mount 8-SO, SuperMESH™
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SQ4080EY-T1_GE3
Vishay Siliconix, N-Channel 150V 18A (Tc) 7.1W (Tc) Surface Mount 8-SO, Automotive, AEC-Q101, TrenchFET®
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SQJ464EP-T1_GE3
Vishay Siliconix, N-Channel 60V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8,
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