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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK(95,96,9E)08-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 5280pF @ 25V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN4R0-60YS,115
Nexperia USA Inc., N-Channel 60V 74A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,
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FDD6690A
ON Semiconductor, N-Channel 30V 12A (Ta), 46A (Tc) 3.3W (Ta), 56W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®
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SIJ438DP-T1-GE3
Vishay Siliconix, N-Channel 40V 80A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IRFS4610TRLPBF
Infineon Technologies, N-Channel 100V 73A (Tc) 190W (Tc) Surface Mount D2PAK, HEXFET®
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BUK9Y8R5-80EX
Nexperia USA Inc., N-Channel 80V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8,
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NTD3055L104-1G
ON Semiconductor, N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Through Hole I-PAK,
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TSM120N06LCS RLG
Taiwan Semiconductor Corporation, N-Channel 60V 23A (Tc) 12.5W (Tc) Surface Mount 8-SOP,
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IXFR64N60Q3
IXYS, N-Channel 600V 42A (Tc) 568W (Tc) Through Hole ISOPLUS247™, HiPerFET™
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IRFH8337TRPBF
Infineon Technologies, N-Channel 30V 12A (Ta), 35A (Tc) 3.2W (Ta), 27W (Tc) Surface Mount PQFN (5x6), HEXFET®
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SI8824EDB-T2-E1
Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
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BSC076N06NS3GATMA1
Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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IRLZ34PBF
Vishay Siliconix, N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB,
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