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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9609-40B
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK1K9A60F,S4X
Toshiba Semiconductor and Storage, N-Channel 600V 3.7A (Ta) 30W (Tc) Through Hole TO-220SIS, U-MOSIX
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ZXMN6A09GTA
Diodes Incorporated, N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223,
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IXTP80N10T
IXYS, N-Channel 100V 80A (Tc) 230W (Tc) Through Hole TO-220AB, TrenchMV™
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IRLI530GPBF
Vishay Siliconix, N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3,
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2SK3703-1E
ON Semiconductor, N-Channel 60V 30A (Ta) 2W (Ta), 25W (Tc) Through Hole TO-220F-3SG,
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DMN2020UFCL-7
Diodes Incorporated, N-Channel 20V 9A (Ta) 610mW (Ta) Surface Mount X1-DFN1616-6 (Type E),
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RFD16N06LESM9A
ON Semiconductor, N-Channel 60V 16A (Tc) 90W (Tc) Surface Mount TO-252AA,
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2V7002KT1G
ON Semiconductor, N-Channel 60V 320mA (Ta) 300mW (Tj) Surface Mount SOT-23, Automotive, AEC-Q101
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SI2300DS-T1-GE3
Vishay Siliconix, N-Channel 30V 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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TPH7R006PL,L1Q
Toshiba Semiconductor and Storage, N-Channel 60V 60A (Tc) 81W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
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IPD30N03S4L09ATMA1
Infineon Technologies, N-Channel 30V 30A (Tc) 42W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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BUK9606-55A,118
Nexperia USA Inc., N-Channel 55V 75A (Tj) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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