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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9620-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 53.4nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 5657pF @ 25V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Nexperia USA Inc., N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK,
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SI7174DP-T1-GE3
Vishay Siliconix, N-Channel 75V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IPN95R3K7P7ATMA1
Infineon Technologies, N-Channel 950V 2A (Tc) 6W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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