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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK962R5-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 17450pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-247, DTMOSIV
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ON Semiconductor, N-Channel 30V 18A (Ta), 22A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™
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Infineon Technologies, N-Channel 30V 8.7A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2), HEXFET®
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STMicroelectronics, N-Channel 600V 20A (Tc) 169W (Tc) Surface Mount D2PAK, MDmesh™ M2
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RTR025N05TL
Rohm Semiconductor, N-Channel 45V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,
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