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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK964R2-80E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 123nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 17130pF @ 25V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Vishay Siliconix, N-Channel 600V 15A (Tc) 180W (Tc) Through Hole TO-247AC,
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Alpha & Omega Semiconductor Inc., N-Channel 650V 12A (Tc) 278W (Tc) Surface Mount TO-263 (D²Pak),
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Taiwan Semiconductor Corporation, N-Channel 150V 24A (Tc) 96W (Tc) Surface Mount 8-PDFN (5x6),
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SISH114ADN-T1-GE3
Vishay Siliconix, N-Channel 30V 18A (Ta), 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®
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