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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK969R0-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 29.8nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Nexperia USA Inc., N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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PSMN069-100YS,115
Nexperia USA Inc., N-Channel 100V 17A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8,
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Infineon Technologies, N-Channel 30V 24A (Ta), 104A (Tc) 3.4W (Ta) Surface Mount PQFN (5x6) Single Die, HEXFET®
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