Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BUK9Y29-40E,115
Standard Package	1500
Manufacturer	Nexperia USA Inc.
Series	Automotive, AEC-Q101, TrenchMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5nC @ 5V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	664pF @ 25V
FET Feature	-
Power Dissipation (Max)	37W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669

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IRFS7430TRLPBF	Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™	View
BUK7Y7R6-40EX	Nexperia USA Inc., N-Channel 40V 79A (Tc) 94.3W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
NVR5198NLT3G	ON Semiconductor, N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
IRFI4321PBF	Infineon Technologies, N-Channel 150V 34A (Tc) 46W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
FDMA86108LZ	ON Semiconductor, N-Channel 100V 2.2A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
SQS460EN-T1_GE3	Vishay Siliconix, N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
STQ1NK60ZR-AP	STMicroelectronics, N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™	View
BSS225H6327FTSA1	Infineon Technologies, N-Channel 600V 90mA (Ta) 1W (Ta) Surface Mount PG-SOT89, SIPMOS®	View
IRL630STRLPBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
TK25N60X5,S1F	Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-247, DTMOSIV-H	View

BUK9Y29-40E,115

Part NumberBUK9Y29-40E,115