BUL642D2G


BUL642D2G

Part NumberBUL642D2G

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BUL642D2G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package50
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)440V
Vce Saturation (Max) @ Ib, Ic1.5V @ 200mA, 2A
Current - Collector Cutoff (Max)200µA
DC Current Gain (hFE) (Min) @ Ic, Vce16 @ 500mA, 1V
Power - Max75W
Frequency - Transition13MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

BUL642D2G - Tags

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