BVSS123LT1G
BVSS123LT1G
Part Number BVSS123LT1G Description MOSFET N-CH 100V 170MA SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 170mA (Ta) 225mW (Ta) Surface Mount SOT-23-3
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BVSS123LT1G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS123LT1 Datasheet Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3
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