CDBJSC5650-G
CDBJSC5650-G
Part Number CDBJSC5650-G Description DIODE SILICON CARBIDE POWER SCHO Package / Case TO-220-2 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Silicon Carbide Schottky 650V 5A (DC) Through Hole TO-220F
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CDBJSC5650-G - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet CDBJSC5650-G Standard Package 50 Manufacturer Comchip Technology Series - Packaging Tube Part Status Active Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 5A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 650V Capacitance @ Vr, F 430pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220F Operating Temperature - Junction -55°C ~ 175°C
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