Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Datasheet	CE3512K2
Standard Package	200
Manufacturer	CEL
Series	-
Packaging	Strip
Part Status	Active
Transistor Type	pHEMT FET
Frequency	12GHz
Gain	13.7dB
Voltage - Test	2V
Current Rating (Amps)	15mA
Noise Figure	0.5dB
Current - Test	10mA
Power - Output	125mW
Voltage - Rated	4V
Package / Case	4-Micro-X
Supplier Device Package	4-Micro-X

VRF152	Microsemi Corporation, RF Mosfet N-Channel 50V 250mA 175MHz 14dB 150W M174,	View
BF998E6327HTSA1	Infineon Technologies, RF Mosfet N-Channel 8V 10mA 45MHz 28dB PG-SOT143-4,	View
ARF461AG	Microsemi Corporation, RF Mosfet N-Channel 50V 65MHz 15dB 150W TO-247,	View
150-102N02A-00	IXYS-RF, RF Mosfet N-Channel 200W DE150, DE	View
BF2040E6814HTSA1	Infineon Technologies, RF Mosfet N-Channel 5V 15mA 800MHz 23dB PG-SOT143-4,	View
VRF151	Microsemi Corporation, RF Mosfet N-Channel 50V 250mA 175MHz 14dB 150W M174,	View
SD2941-10W	STMicroelectronics, RF Mosfet N-Channel 50V 250mA 175MHz 15.8dB 175W M174,	View
IXZ2210N50L2	IXYS-RF, RF Mosfet 2 N-Channel (Dual) 100V 70MHz 17dB 270W, Z-MOS™	View
STAC2932FW	STMicroelectronics, RF Mosfet N-Channel 50V 250mA 175MHz 390W STAC244F,	View
CE3512K2-C1	CEL, RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X,	View
VRF3933	Microsemi Corporation, RF Mosfet N-Channel 100V 250mA 30MHz 22dB 300W M177,	View
3SK293(TE85L,F)	Toshiba Semiconductor and Storage, RF Mosfet N-Channel Dual Gate 6V 10mA 800MHz 22dB USQ,	View

CE3512K2

Part NumberCE3512K2