CSD19537Q3T

Part NumberCSD19537Q3T

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD19537Q3
Standard Package	250
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSON (3.3x3.3)
Package / Case	8-PowerVDFN

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