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CSD25211W1015


CSD25211W1015

Part NumberCSD25211W1015

Manufacturer

Description

Datasheet

Package / Case6-UFBGA, DSBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

CSD25211W1015 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerTexas Instruments
SeriesNexFET™
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs33mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.1nC @ 4.5V
Vgs (Max)-6V
Input Capacitance (Ciss) (Max) @ Vds570pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-DSBGA (1x1.5)
Package / Case6-UFBGA, DSBGA

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