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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet CSD86356Q5D Datasheet
Standard Package 1
Manufacturer Texas Instruments
Series NexFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 1.85V @ 250µA, 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V, 19.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1.04nF @ 12.5V, 2.51nF @ 12.5V
Power - Max 12W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-VSON-CLIP (5x6)
NTMD4840NR2G
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ON Semiconductor, Mosfet Array 2 N-Channel (Dual) 20V 6.5A 900mW Surface Mount 8-SOIC, PowerTrench®
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FDME1024NZT
ON Semiconductor, Mosfet Array 2 N-Channel (Dual) 20V 3.8A 600mW Surface Mount 6-MicroFET (1.6x1.6), PowerTrench®
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