CSD86356Q5DT

Part NumberCSD86356Q5DT

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	CSD86356Q5D Datasheet
Standard Package	1
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Rds On (Max) @ Id, Vgs	4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id	1.85V @ 250µA, 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.9nC @ 4.5V, 19.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1.04nF @ 12.5V, 2.51nF @ 12.5V
Power - Max	12W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-VSON-CLIP (5x6)

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