DMG563H10R


DMG563H10R

Part NumberDMG563H10R

Manufacturer

Description

Datasheet

Package / Case6-SMD (5 Leads), Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

DMG563H10R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerPanasonic Electronic Components
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms, 4.7kOhms
Resistor - Emitter Base (R2)47kOhms, 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / Case6-SMD (5 Leads), Flat Lead
Supplier Device PackageSMini5-F3-B
Base Part NumberDMG563

DMG563H10R - Related Products

More >>
RN4902FE,LF(CT Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6, View
UMC5NTR Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 30mA, 100mA 250MHz 150mW Surface Mount UMT5, View
DMG964020R Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini6-F3-B, View
SMUN5315DW1T1G ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363, View
DMG963H50R Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B, View
DCX143EU-7-F Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363, View
NSBC114YPDXV6T1G ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563, View
RN4609(TE85L,F) Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6, View
MUN5335DW1T2G ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363, View
DMG214010R Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 NPN 50V 100mA 150MHz 300mW Surface Mount Mini6-G4-B, View
NSVMUN5334DW1T1G ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363, View
PEMD2,115 Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666, View

DMG563H10R - Tags

DMG563H10R DMG563H10R PDF DMG563H10R datasheet DMG563H10R specification DMG563H10R image DMG563H10R India Renesas Electronics India DMG563H10R buy DMG563H10R DMG563H10R price DMG563H10R distributor DMG563H10R supplier DMG563H10R wholesales