DMN1019UFDE-7
DMN1019UFDE-7
Part Number DMN1019UFDE-7 Description MOSFET N CH 12V 11A U-DFN2020-6E Package / Case 6-UDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E)
To learn about the specification of DMN1019UFDE-7, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DMN1019UFDE-7 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of DMN1019UFDE-7.
We are offering DMN1019UFDE-7 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
DMN1019UFDE-7 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMN1019UFDE Standard Package 1 Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 10mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2425pF @ 10V FET Feature - Power Dissipation (Max) 690mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN2020-6 (Type E) Package / Case 6-UDFN Exposed Pad
DMN1019UFDE-7 - Related ProductsMore >>
SIHP28N65EF-GE3 Vishay Siliconix, N-Channel 650V 28A (Tc) 250W (Tc) Through Hole TO-220AB,
View
SUP90330E-GE3 Vishay Siliconix, N-Channel 200V 35.8A (Tc) 125W (Tc) Through Hole TO-220AB, ThunderFET®
View
IRFR220NTRPBF Infineon Technologies, N-Channel 200V 5A (Tc) 43W (Tc) Surface Mount D-Pak, HEXFET®
View
RFD3055LE ON Semiconductor, N-Channel 60V 11A (Tc) 38W (Tc) Through Hole I-PAK,
View
BSC014N04LSATMA1 Infineon Technologies, N-Channel 40V 32A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount SuperSO8, OptiMOS™
View
TPW4R50ANH,L1Q Toshiba Semiconductor and Storage, N-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance, U-MOSVIII-H
View
SI7172ADP-T1-RE3 Vishay Siliconix, N-Channel 200V Surface Mount PowerPAK® SO-8,
View
DMN95H8D5HCT Diodes Incorporated, N-Channel 950V 2.5A (Tc) 125W (Tc) Through Hole TO-220AB,
View
BSC060N10NS3GATMA1 Infineon Technologies, N-Channel 100V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
STD2NC45-1 STMicroelectronics, N-Channel 450V 1.5A (Tc) 30W (Tc) Through Hole I-PAK, SuperMESH™
View
VN2460N8-G Microchip Technology, N-Channel 600V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
IPP110N20N3GXKSA1 Infineon Technologies, N-Channel 200V 88A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
DMN1019UFDE-7 - Tags
English
