DMN10H099SFG-7
DMN10H099SFG-7
Part Number DMN10H099SFG-7 Description MOSFET N-CH 100V 4.2A PWRDI3333 Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8
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DMN10H099SFG-7 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMN10H099SFG Standard Package 1 Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 80mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1172pF @ 50V FET Feature - Power Dissipation (Max) 980mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN
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