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DMN2014LHAB-7


DMN2014LHAB-7

Part NumberDMN2014LHAB-7

Manufacturer

Description

Datasheet

Package / Case6-UFDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

DMN2014LHAB-7 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerDiodes Incorporated
Series-
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C9A
Rds On (Max) @ Id, Vgs13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 10V
Power - Max800mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFDFN Exposed Pad
Supplier Device PackageU-DFN2030-6 (Type B)

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DMN2014LHAB-7 - Tags

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