Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN62D1SFB
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 40mA, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 40V
FET Feature	-
Power Dissipation (Max)	470mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-DFN1006 (1.0x0.6)
Package / Case	3-UFDFN

RU1C001UNTCL	Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount UMT3F,	View
FQPF65N06	ON Semiconductor, N-Channel 60V 40A (Tc) 56W (Tc) Through Hole TO-220F, QFET®	View
FDS3512	ON Semiconductor, N-Channel 80V 4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
SIHB15N50E-GE3	Vishay Siliconix, N-Channel 500V 14.5A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263),	View
DMN61D8LQ-13	Diodes Incorporated, N-Channel 60V 470mA (Ta) 390mW (Ta) Surface Mount SOT-23,	View
IRFI510GPBF	Vishay Siliconix, N-Channel 100V 4.5A (Tc) 27W (Tc) Through Hole TO-220-3,	View
IPD100N04S402ATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
IPP60R190P6XKSA1	Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3, CoolMOS™ P6	View
FQD16N25CTM	ON Semiconductor, N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount D-Pak, QFET®	View
ZXMN10A08E6TA	Diodes Incorporated, N-Channel 100V 1.5A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
RJU002N06T106	Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
NVTFS5C471NLWFTAG	ON Semiconductor, N-Channel 40V 41A (Tc) 30W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View

DMN62D1SFB-7B

Part NumberDMN62D1SFB-7B