DMT10H010LSS-13
DMT10H010LSS-13
Part Number DMT10H010LSS-13
Description MOSFET N-CH 100V SO-8
Package / Case 8-SOIC (0.154", 3.90mm Width)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 11.5A (Ta), 29.5A (Tc) 1.4W (Ta) Surface Mount 8-SO
To learn about the specification of DMT10H010LSS-13, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DMT10H010LSS-13 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of DMT10H010LSS-13.
We are offering DMT10H010LSS-13 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
DMT10H010LSS-13 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMT10H010LSS
Standard Package 1
Manufacturer Diodes Incorporated
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta), 29.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V
FET Feature -
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
DMT10H010LSS-13 - Related ProductsMore >>
IRFB4710PBF
Infineon Technologies, N-Channel 100V 75A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB, HEXFET®
View
ZXMN3F30FHTA
Diodes Incorporated, N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3,
View
IAUT200N08S5N023ATMA1
Infineon Technologies, N-Channel 80V 200A (Tc) 200W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5
View
IXFT32N100XHV
IXYS, N-Channel 1000V 32A (Tc) 890W (Tc) Surface Mount TO-268HV (IXFT), HiPerFET™
View
IRFS3207ZTRRPBF
Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263), HEXFET®
View
STD4N62K3
STMicroelectronics, N-Channel 620V 3.8A (Tc) 70W (Tc) Surface Mount DPAK, SuperMESH3™
View
SIR186DP-T1-RE3
Vishay Siliconix, N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
FCMT199N60
ON Semiconductor, N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88, SuperFET® II
View
PMZB600UNELYL
Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3, TrenchMOS™
View
AUIRF1404ZSTRL
Infineon Technologies, N-Channel 40V 160A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®
View
SI7804DN-T1-E3
Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
DMN4468LSS-13
Diodes Incorporated, N-Channel 30V 10A (Ta) 1.52W (Ta) Surface Mount 8-SO,
View
DMT10H010LSS-13 - Tags