DRA2123E0L


DRA2123E0L

Part NumberDRA2123E0L

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

DRA2123E0L - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package3000
ManufacturerPanasonic Electronic Components
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageMini3-G3-B
Base Part NumberDRA2123

DRA2123E0L - Related Products

More >>
DTA124XKAT146 Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 50mA 250MHz 200mW Surface Mount SMT3, View
DTA124XCAT116 Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SST3, View
DTA143ZEBTL Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3F (SOT-416FL), View
DTA123JETL Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3, View
DTA024EUBTL Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 30mA 250MHz 200mW Surface Mount UMT3F, View
BCR158E6327HTSA1 Infineon Technologies, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3, View
DTA114EUAT106 Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 50mA 250MHz 200mW Surface Mount UMT3, View
DTA123JUAT106 Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3, View
RN2317(TE85L,F) Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM, View
PDTA143ET,215 Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250mW Surface Mount TO-236AB, View
DTA115GUAT106 Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3, View
DDTB142JU-7-F Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SOT-323, View

DRA2123E0L - Tags

DRA2123E0L DRA2123E0L PDF DRA2123E0L datasheet DRA2123E0L specification DRA2123E0L image DRA2123E0L India Renesas Electronics India DRA2123E0L buy DRA2123E0L DRA2123E0L price DRA2123E0L distributor DRA2123E0L supplier DRA2123E0L wholesales