DTD114GCT116

Part NumberDTD114GCT116

ManufacturerRohm Semiconductor

DescriptionNPN 500MA/50V DIGITAL TRANSISTOR

DatasheetDTD114GC

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3

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DTD114GCT116 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet	DTD114GC
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA (ICBO)
Frequency - Transition	200MHz
Power - Max	200mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SST3

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