EMB11FHAT2R


EMB11FHAT2R

Part NumberEMB11FHAT2R

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

EMB11FHAT2R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
SeriesAutomotive, AEC-Q101
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)-
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6

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