EMG3T2R


EMG3T2R

Part NumberEMG3T2R

Manufacturer

Description

Datasheet

Package / CaseSC-75, SOT-416

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

EMG3T2R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA (ICBO)
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageEMT3
Base Part Number*MG3

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