EPC2100ENG

Part NumberEPC2100ENG

ManufacturerEPC

DescriptionGAN TRANS 2N-CH 30V BUMPED DIE

DatasheetEPC2100 Datasheet

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die

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EPC2100ENG - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

EPC2100 Datasheet

Standard Package

Manufacturer

EPC

Series

eGaN®

Packaging

Tray

Part Status

Discontinued at Digi-Key

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 40A (Ta)

Rds On (Max) @ Id, Vgs

8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

2.5V @ 4mA, 2.5V @ 16mA

Gate Charge (Qg) (Max) @ Vgs

4.9nC @ 15V, 19nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds

475pF @ 15V, 1960pF @ 15V

Power - Max

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

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