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EPC2108


EPC2108

Part NumberEPC2108

Manufacturer

Description

Datasheet

Package / Case9-VFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

EPC2108 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package2500
ManufacturerEPC
SerieseGaN®
PackagingTape & Reel (TR)
Part StatusActive
FET Type3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)60V, 100V
Current - Continuous Drain (Id) @ 25°C1.7A, 500mA
Rds On (Max) @ Id, Vgs190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds22pF @ 30V, 7pF @ 30V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case9-VFBGA
Supplier Device Package9-BGA (1.35x1.35)

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