EPC2110ENGRT

Part NumberEPC2110ENGRT

ManufacturerEPC

DescriptionGAN TRANS 2N-CH 120V BUMPED DIE

DatasheetEPC2110 Datasheet

Package / CaseDie

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Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die

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EPC2110ENGRT - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	EPC2110 Datasheet
Standard Package	1
Manufacturer	EPC
Series	eGaN®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual) Common Source
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	3.4A
Rds On (Max) @ Id, Vgs	60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id	2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 60V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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