ES6U1T2R
ES6U1T2R
Part Number ES6U1T2R Description MOSFET P-CH 12V 1.3A WEMT6 Package / Case SOT-563, SOT-666Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 12V 1.3A (Ta) 700mW (Ta) Surface Mount 6-WEMT
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ES6U1T2R - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ES6U1 Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Not For New Designs FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 260mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 6V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WEMT Package / Case SOT-563, SOT-666
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