FCH190N65F-F085

Part NumberFCH190N65F-F085

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 650V 20.6A TO247

DatasheetFCH190N65F_F085

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3

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FCH190N65F-F085 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FCH190N65F_F085

Standard Package

450

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, SuperFET® II

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 27A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3181pF @ 25V

FET Feature

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case