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FCP110N65F

FCP110N65F

Part NumberFCP110N65F

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 650V 35A TO220

DatasheetFCP110N65F

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 35A (Tc) 357W (Tc) Through Hole TO-220-3

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FCP110N65F - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FCP110N65F
Standard Package	800
Manufacturer	ON Semiconductor
Series	FRFET®, SuperFET® II
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4895pF @ 100V
FET Feature	-
Power Dissipation (Max)	357W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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