FCP110N65F


FCP110N65F

Part NumberFCP110N65F

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FCP110N65F - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package800
ManufacturerON Semiconductor
SeriesFRFET®, SuperFET® II
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs145nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4895pF @ 100V
FET Feature-
Power Dissipation (Max)357W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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FCP110N65F - Tags

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