FCP110N65F
FCP110N65F
Part Number FCP110N65F Description MOSFET N-CH 650V 35A TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 35A (Tc) 357W (Tc) Through Hole TO-220-3
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FCP110N65F - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FCP110N65F Standard Package 800 Manufacturer ON Semiconductor Series FRFET®, SuperFET® II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id 5V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4895pF @ 100V FET Feature - Power Dissipation (Max) 357W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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