FCP165N60E

Part NumberFCP165N60E

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 23A TO220

DatasheetFCP165N60E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-220-3

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FCP165N60E - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FCP165N60E

Standard Package

800

Manufacturer

ON Semiconductor

Series

SuperFET® II

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2434pF @ 380V

FET Feature

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

All categories

FCP165N60E

Part NumberFCP165N60E

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 23A TO220

DatasheetFCP165N60E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-220-3

FCP165N60E - Product Attributes

FCP165N60E - Tags