FCP165N65S3
FCP165N65S3
Part Number FCP165N65S3 Description SF3 650V 165MOHM E TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3
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FCP165N65S3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FCP165N65S3 Standard Package 800 Manufacturer ON Semiconductor Series SuperFET® III Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 165mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V FET Feature - Power Dissipation (Max) 154W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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