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FCP165N65S3

FCP165N65S3

Part NumberFCP165N65S3

ManufacturerON Semiconductor

DescriptionSF3 650V 165MOHM E TO220

DatasheetFCP165N65S3

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3

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FCP165N65S3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FCP165N65S3
Standard Package	800
Manufacturer	ON Semiconductor
Series	SuperFET® III
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 400V
FET Feature	-
Power Dissipation (Max)	154W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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