FCP190N60-GF102

Part NumberFCP190N60-GF102

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V TO-220-3

DatasheetFCP190N60_GF102

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20.2A (Tc) 208W (Tc) Through Hole TO-220-3

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FCP190N60-GF102 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FCP190N60_GF102

Standard Package

800

Manufacturer

ON Semiconductor

Series

SuperFET® II

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

199mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case