FCP190N65F

Part NumberFCP190N65F

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 650V 20.6A TO220-3

DatasheetFCP190N65F

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3

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FCP190N65F - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FCP190N65F

Standard Package

800

Manufacturer

ON Semiconductor

Series

FRFET®, SuperFET® II

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3225pF @ 25V

FET Feature

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

All categories

FCP190N65F

Part NumberFCP190N65F

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 650V 20.6A TO220-3

DatasheetFCP190N65F

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3

FCP190N65F - Product Attributes

FCP190N65F - Tags