FCP22N60N-F102

Part NumberFCP22N60N-F102

ManufacturerON Semiconductor

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	800
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±45V
Input Capacitance (Ciss) (Max) @ Vds	1950pF @ 100V
FET Feature	-
Power Dissipation (Max)	205W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3