FCP650N80Z

Part NumberFCP650N80Z

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 800V 10A

DatasheetFCP650N80Z Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 10A (Tc) 162W (Tc) Through Hole TO-220

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FCP650N80Z - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FCP650N80Z Datasheet

Standard Package

800

Manufacturer

ON Semiconductor

Series

SuperFET® II

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 800µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1565pF @ 100V

FET Feature

Power Dissipation (Max)

162W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

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