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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB045AN08A0-F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI3464DV-T1-GE3
Vishay Siliconix, N-Channel 20V 8A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®
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SQD50N05-11L_GE3
Vishay Siliconix, N-Channel 50V 50A (Tc) 75W (Tc) Surface Mount TO-252AA, TrenchFET®
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IRFP260PBF
Vishay Siliconix, N-Channel 200V 46A (Tc) 280W (Tc) Through Hole TO-247-3,
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CSD19531Q5AT
Texas Instruments, N-Channel 100V 100A (Ta) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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DMN4800LSS-13
Diodes Incorporated, N-Channel 30V 9A (Ta) 1.46W (Ta) Surface Mount 8-SOP,
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SSM3K341TU,LF
Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 1.8W (Ta) Surface Mount UFM, U-MOSVIII-H
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IPD040N03LGATMA1
Infineon Technologies, N-Channel 30V 90A (Tc) 79W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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STF42N60M2-EP
STMicroelectronics, N-Channel 600V 34A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
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NVS4409NT1G
ON Semiconductor, N-Channel 25V 700mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323),
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CSD19503KCS
Texas Instruments, N-Channel 80V 100A (Ta) 188W (Tc) Through Hole TO-220-3, NexFET™
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RS1E300GNTB
Rohm Semiconductor, N-Channel 30V 30A (Ta) 3W (Ta), 33W (Tc) Surface Mount 8-HSOP,
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SSM3K361R,LF
Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 1.2W (Ta) Surface Mount SOT-23F, U-MOSVIII-H
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