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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB045AN08A0-F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI7804DN-T1-E3
Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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STD5N60M2
STMicroelectronics, N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™ II Plus
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SSM6K781G,LF
Toshiba Semiconductor and Storage, N-Channel 12V 7A (Ta) 1.6W (Ta) Surface Mount 6-WCSPC (1.5x1.0), U-MOSVII-H
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FDA032N08
ON Semiconductor, N-Channel 75V 120A (Tc) 375W (Tc) Through Hole TO-3PN, PowerTrench®
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PMN30UNEX
Nexperia USA Inc., N-Channel 20V 4.8A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP,
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SUD23N06-31L-T4-E3
Vishay Siliconix, N-Channel 60V 3W (Ta), 100W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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IPL60R365P7AUMA1
Infineon Technologies, N-Channel 650V 10A (Tc) 46W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7
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FQU5N40TU
ON Semiconductor, N-Channel 400V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®
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STB6N65M2
STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™
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HUF76629D3ST
ON Semiconductor, N-Channel 100V 20A (Tc) 110W (Tc) Surface Mount TO-252AA, UltraFET™
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SIHG44N65EF-GE3
Vishay Siliconix, N-Channel 650V 46A (Tc) 417W (Tc) Through Hole TO-247AC,
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SIHP15N50E-GE3
Vishay Siliconix, N-Channel 500V 14.5A (Tc) 156W (Tc) Through Hole TO-220AB,
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