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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB14AN06LA0-F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB3502
ON Semiconductor, N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc) Surface Mount TO-263AB, PowerTrench®
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BUK9230-100B,118
Nexperia USA Inc., N-Channel 100V 47A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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STD9HN65M2
STMicroelectronics, N-Channel 650V 5.5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ M2
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RQ3L050GNTB
Rohm Semiconductor, N-Channel 60V 12A (Tc) 14.8W (Tc) Surface Mount 8-HSMT (3.2x3),
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ZVN2106A
Diodes Incorporated, N-Channel 60V 450mA (Ta) 700mW (Ta) Through Hole TO-92-3,
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IRLZ34PBF
Vishay Siliconix, N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB,
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SQD50N06-09L_GE3
Vishay Siliconix, N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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STL11N65M2
STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Surface Mount,
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NX7002BKR
Nexperia USA Inc., N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB,
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PSMN1R5-30BLEJ
Nexperia USA Inc., N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK,
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SUM40010EL-GE3
Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®
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IAUT150N10S5N035ATMA1
Infineon Technologies, N-Channel 100V 150A (Tc) 166W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5
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