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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB14AN06LA0-F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUD15N15-95-E3
Vishay Siliconix, N-Channel 150V 15A (Tc) 2.7W (Ta), 62W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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STD105N10F7AG
STMicroelectronics, N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK, STripFET™ F7
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BUK7215-55A,118
Nexperia USA Inc., N-Channel 55V 55A (Tc) 115W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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SIB422EDK-T1-GE3
Vishay Siliconix, N-Channel 20V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®
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IPB123N10N3GATMA1
Infineon Technologies, N-Channel 100V 58A (Tc) 94W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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NTMFS4837NHT1G
ON Semiconductor, N-Channel 30V 10.2A (Ta), 75A (Tc) 880mW (Ta), 48W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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SISA14DN-T1-GE3
Vishay Siliconix, N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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ZVNL120A
Diodes Incorporated, N-Channel 200V 180mA (Ta) 700mW (Ta) Through Hole TO-92-3,
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TSM70NB1R4CP ROG
Taiwan Semiconductor Corporation, N-Channel 700V 3A (Tc) 28W (Tc) Surface Mount TO-252, (D-Pak),
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SI3458BDV-T1-E3
Vishay Siliconix, N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®
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TN2106K1-G
Microchip Technology, N-Channel 60V 280mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),
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TPN3300ANH,LQ
Toshiba Semiconductor and Storage, N-Channel 100V 9.4A (Tc) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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