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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB3632-F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRFS4310Z
Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®
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SQJA80EP-T1_GE3
Vishay Siliconix, N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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R6020FNX
Rohm Semiconductor, N-Channel 600V 20A (Tc) 50W (Tc) Through Hole TO-220FM,
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CSD18536KTT
Texas Instruments, N-Channel 60V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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RQ3E100BNTB
Rohm Semiconductor, N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),
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ZXMN10A11GTA
Diodes Incorporated, N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223,
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IRFBE20PBF
Vishay Siliconix, N-Channel 800V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB,
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PSMN5R0-100ES,127
Nexperia USA Inc., N-Channel 100V 120A (Tc) 338W (Tc) Through Hole I2PAK,
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BSS806NH6327XTSA1
Infineon Technologies, N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
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SI3458BDV-T1-GE3
Vishay Siliconix, N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®
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STD9NM60N
STMicroelectronics, N-Channel 600V 6.5A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ II
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BUK7M6R3-40EX
Nexperia USA Inc., N-Channel 40V 70A (Tc) 79W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101
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