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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB3632, FDH3632, FDP3632
Standard Package 800
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDBL9406-F085
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FDD6635
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CSD19502Q5B
Texas Instruments, N-Channel 80V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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SI4842BDY-T1-GE3
Vishay Siliconix, N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO, TrenchFET®
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CSD18535KTT
Texas Instruments, N-Channel 60V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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