Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ FDB86363-F085

FDB86363-F085

FDB86363-F085

Part NumberFDB86363-F085

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 80V 110A TO263

DatasheetFDB86363-F085

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 110A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of FDB86363-F085, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDB86363-F085 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDB86363-F085.
We are offering FDB86363-F085 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

FDB86363-F085 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDB86363-F085
Standard Package	800
Manufacturer	ON Semiconductor
Series	Automotive, AEC-Q101, PowerTrench®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10000pF @ 40V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB86363-F085 - Related Products

	DMT6005LSS-13	Diodes Incorporated, N-Channel 60V 13.5A (Ta) 1.3W (Ta) Surface Mount 8-SO,	View
	IRLML2030TRPBF	Infineon Technologies, N-Channel 30V 2.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	IRFPE30PBF	Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-247-3,	View
	DMN2075U-7	Diodes Incorporated, N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount SOT-23-3,	View
	STWA70N60DM6	STMicroelectronics, N-Channel 600V 62A Through Hole TO-247 Long Leads, MDmesh™ DM6	View
	SQS850EN-T1_GE3	Vishay Siliconix, N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8,	View
	CSD17302Q5A	Texas Instruments, N-Channel 30V 16A (Ta), 87A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	SQ3410EV-T1_GE3	Vishay Siliconix, N-Channel 30V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	PSMN4R5-30YLC,115	Nexperia USA Inc., N-Channel 30V 84A (Tc) 61W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	FDMS86101	ON Semiconductor, N-Channel 100V 12.4A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	DMT8012LSS-13	Diodes Incorporated, N-Channel 80V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101	View
	TPH4R008NH,L1Q	Toshiba Semiconductor and Storage, N-Channel 80V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View

FDB86363-F085 - Tags

FDB86363-F085 FDB86363-F085 PDF FDB86363-F085 datasheet FDB86363-F085 specification FDB86363-F085 image FDB86363-F085 India Renesas Electronics India FDB86363-F085 buy FDB86363-F085 FDB86363-F085 price FDB86363-F085 distributor FDB86363-F085 supplier FDB86363-F085 wholesales