Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ FDB86363-F085

FDB86363-F085

FDB86363-F085

Part NumberFDB86363-F085

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 80V 110A TO263

DatasheetFDB86363-F085

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 110A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of FDB86363-F085, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDB86363-F085 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDB86363-F085.
We are offering FDB86363-F085 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

FDB86363-F085 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDB86363-F085
Standard Package	800
Manufacturer	ON Semiconductor
Series	Automotive, AEC-Q101, PowerTrench®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10000pF @ 40V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB86363-F085 - Related Products

	IXFT170N25X3HV	IXYS, N-Channel 250V 170A (Tc) 960W (Tc) Surface Mount TO-268HV, HiPerFET™	View
	SI7322DN-T1-E3	Vishay Siliconix, N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	BS170-D26Z	ON Semiconductor, N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3,	View
	PSMN6R5-30MLDX	Nexperia USA Inc., N-Channel 30V 65A (Tc) 51W (Tc) Surface Mount LFPAK33,	View
	SIDR390DP-T1-GE3	Vishay Siliconix, N-Channel 30V 69.9A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
	IRL540PBF	Vishay Siliconix, N-Channel 100V 28A (Tc) 150W (Tc) Through Hole TO-220AB,	View
	RCX300N20	Rohm Semiconductor, N-Channel 200V 30A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,	View
	IRFSL3306PBF	Infineon Technologies, N-Channel 60V 120A (Tc) 230W (Tc) Through Hole TO-262, HEXFET®	View
	VN2224N3-G	Microchip Technology, N-Channel 240V 540mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	IRF3205LPBF	Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-262, HEXFET®	View
	STB7NK80ZT4	STMicroelectronics, N-Channel 800V 5.2A (Tc) 125W (Tc) Surface Mount D2PAK, SuperMESH™	View
	IXFP72N20X3	IXYS, N-Channel 200V 72A (Tc) 320W (Tc) Through Hole TO-220, HiPerFET™	View

FDB86363-F085 - Tags

FDB86363-F085 FDB86363-F085 PDF FDB86363-F085 datasheet FDB86363-F085 specification FDB86363-F085 image FDB86363-F085 India Renesas Electronics India FDB86363-F085 buy FDB86363-F085 FDB86363-F085 price FDB86363-F085 distributor FDB86363-F085 supplier FDB86363-F085 wholesales