FDC636P

Part NumberFDC636P

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 20V 2.8A SSOT-6

DatasheetFDC636P

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

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FDC636P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDC636P

Standard Package

3000

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

130mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 10V

FET Feature

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6

All categories

FDC636P

Part NumberFDC636P

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 20V 2.8A SSOT-6

DatasheetFDC636P

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

FDC636P - Product Attributes

FDC636P - Tags