FDC637AN
FDC637AN
Part Number FDC637AN Description MOSFET N-CH 20V 6.2A SSOT-6 Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
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FDC637AN - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDC637AN Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1125pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6
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R6004KNX Rohm Semiconductor, N-Channel 600V 4A (Tc) 40W (Tc) Through Hole TO-220FM,
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