FDD2612

Part NumberFDD2612

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 4.9A D-PAK

DatasheetFDD2612

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 4.9A (Ta) 42W (Ta) Surface Mount TO-252

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FDD2612 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDD2612

Standard Package

2500

Manufacturer

ON Semiconductor

Series

PowerTrench®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

4.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

720mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

234pF @ 100V

FET Feature

Power Dissipation (Max)

42W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

All categories

FDD2612

Part NumberFDD2612

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 4.9A D-PAK

DatasheetFDD2612

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 4.9A (Ta) 42W (Ta) Surface Mount TO-252

FDD2612 - Product Attributes

FDD2612 - Tags