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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD26AN06A0_F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
FET Feature -
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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IRFS9N60ATRLPBF
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NTTFS4C06NTWG
ON Semiconductor, N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3),
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DMN1150UFB-7B
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STL18N60M2
STMicroelectronics, N-Channel 600V 9A (Tc) 57W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ II Plus
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IRF2805PBF
Infineon Technologies, N-Channel 55V 75A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
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IRL540STRLPBF
Vishay Siliconix, N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,
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DMN63D8LW-13
Diodes Incorporated, N-Channel 30V 380mA (Ta) 300mW (Ta) Surface Mount SOT-323,
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SUD50N03-06AP-E3
Vishay Siliconix, N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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FDB075N15A-F085
ON Semiconductor, N-Channel 150V 110A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, PowerTrench®
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IRFBA90N20DPBF
Infineon Technologies, N-Channel 200V 98A (Tc) 650W (Tc) Through Hole SUPER-220™ (TO-273AA), HEXFET®
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STY60NM60
STMicroelectronics, N-Channel 600V 60A (Tc) 560W (Tc) Through Hole MAX247™, MDmesh™
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