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FDD850N10LD


FDD850N10LD

Part NumberFDD850N10LD

Manufacturer

Description

Datasheet

Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FDD850N10LD - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
SeriesPowerTrench®
PackagingCut Tape (CT)
Part StatusLast Time Buy
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C15.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs75mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28.9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1465pF @ 25V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-4L
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD

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