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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86569_F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2520pF @ 30V
FET Feature -
Power Dissipation (Max) 150W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN601WK-7
Diodes Incorporated, N-Channel 60V 300mA (Ta) 200mW (Ta) Surface Mount SOT-323,
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XR46000ESETR
MaxLinear, Inc., N-Channel 600V 1.5A (Tc) 20W (Tc) Surface Mount SOT-223,
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IRFR110TRLPBF
Vishay Siliconix, N-Channel 100V 4.3A (Tc) 25W (Tc) Surface Mount D-Pak,
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R6030KNXC7
Rohm Semiconductor, N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-220FM,
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HAT2173H-EL-E
Renesas Electronics America, N-Channel 100V 25A (Ta) 30W (Tc) Surface Mount LFPAK,
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IXFB120N50P2
IXYS, N-Channel 500V 120A (Tc) 1890W (Tc) Through Hole PLUS264™, HiPerFET™, PolarHV™
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SSM3K329R,LF
Toshiba Semiconductor and Storage, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIII
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FCP104N60
ON Semiconductor, N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-220-3, SuperFET® II
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SQJQ404E-T1_GE3
Vishay Siliconix, N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8, Automotive, AEC-Q101, TrenchFET®
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FDMC010N08C
ON Semiconductor, N-Channel 80V 11A (Ta), 51A (Tc) 2.4W (Ta), 52W (Tc) Surface Mount Power33, PowerTrench®
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BSC010NE2LSATMA1
Infineon Technologies, N-Channel 25V 39A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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IRFS4115TRLPBF
Infineon Technologies, N-Channel 150V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®
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